The effect of native oxide on thin gate oxide integrity

doi:10.1109/55.728901

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DC 欄位	值	語言
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Lin, BC	en_US
dc.contributor.author	Chen, WJ	en_US
dc.contributor.author	Lin, YB	en_US
dc.contributor.author	Thai, C	en_US
dc.date.accessioned	2014-12-08T15:47:25Z	-
dc.date.available	2014-12-08T15:47:25Z	-
dc.date.issued	1998-11-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.728901	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31785	-
dc.description.abstract	We have studied the effect of native oxide on thin gate oxide integrity. Much improved leakage current of gate oxide can be obtained by in situ desorbing the native oxide using a HF-vapor treated and H-2 backed process. Furthermore, extremely sharp interface between oxide and Si is obtained, and good oxide reliability is achieved even under a high current density stress of 11 A/cm(2) and a large charge injection of 7.0 x 10(4) C/cm(2). The presence of native oxide will increase the interface roughness, gate oxide leakage current and stress-induced hole trap.	en_US
dc.language.iso	en_US	en_US
dc.title	The effect of native oxide on thin gate oxide integrity	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.728901	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	19	en_US
dc.citation.issue	11	en_US
dc.citation.spage	426	en_US
dc.citation.epage	428	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000076720600010	-
dc.citation.woscount	26	-
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