標題: Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning
作者: Chao, TS
Lin, YH
Yang, WL
電子物理學系
Department of Electrophysics
關鍵字: in situ HF;MOSFETs;native oxide;silicon (111);vapor
公開日期: 1-九月-2004
摘要: In this paper, we grow and characterize in detail native-oxide-free ultrathin gate oxide on silicon (111) by an advance clustered vertical furnace with in situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of time-to-breakdown, drain current, and transconductance. In-situ HF-vapor cleaning by a clustered vertical furnace appears to be very promising to grow high-quality native-oxide-free gate oxide on silicon (111).
URI: http://dx.doi.org/10.1109/LED.2004.834733
http://hdl.handle.net/11536/26448
ISSN: 0741-3106
DOI: 10.1109/LED.2004.834733
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 25
Issue: 9
起始頁: 625
結束頁: 627
顯示於類別:期刊論文


文件中的檔案:

  1. 000223577600012.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。