標題: | Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning |
作者: | Chao, TS Lin, YH Yang, WL 電子物理學系 Department of Electrophysics |
關鍵字: | in situ HF;MOSFETs;native oxide;silicon (111);vapor |
公開日期: | 1-九月-2004 |
摘要: | In this paper, we grow and characterize in detail native-oxide-free ultrathin gate oxide on silicon (111) by an advance clustered vertical furnace with in situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of time-to-breakdown, drain current, and transconductance. In-situ HF-vapor cleaning by a clustered vertical furnace appears to be very promising to grow high-quality native-oxide-free gate oxide on silicon (111). |
URI: | http://dx.doi.org/10.1109/LED.2004.834733 http://hdl.handle.net/11536/26448 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2004.834733 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 25 |
Issue: | 9 |
起始頁: | 625 |
結束頁: | 627 |
顯示於類別: | 期刊論文 |