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公開日期標題作者
1-十二月-2019Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiOx/Si Substrates Using Area-Selective CVD TechnologyChung, Yun-Yan; Lu, Kuan-Cheng; Cheng, Chao-Ching; Li, Ming-Yang; Lin, Chao-Ting; Li, Chi-Feng; Chen, Jyun-Hong; Lai, Tung-Yen; Li, Kai-Shin; Shieh, Jia-Min; Su, Sheng-Kai; Chiang, Hung-Li; Chen, Tzu-Chiang; Li, Lain-Jong; Wong, H-S Philip; Jian, Wen-Bin; Chien, Chao-Hsin; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-十月-2019Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line MeasurementChung, Yun-Yan; Li, Chi-Feng; Lin, Chao-Ting; Ho, Yen-Teng; Chien, Chao-Hsin; 電子工程學系及電子研究所; 國際半導體學院; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2019First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrateCheng, Chao-Ching; Chung, Yun-Yan; Li, Ming-Yang; Lin, Chao-Ting; Li, Chi-Feng; Chen, Jyun-Hong; Lai, Tung-Yen; Li, Kai-Shin; Shieh, Jia-Min; Su, Sheng-Kai; Chiang, Hung-Li; Chen, Tzu-Chiang; Li, Lain-Jong; Wong, H-S Philip; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
4-三月-2015Use of Ultrafast Time-Resolved Spectroscopy to Demonstrate the Effect of Annealing on the Performance of P3HT:PCBM Solar CellsWang, Yu-Ting; Chen, Mei-Hsin; Lin, Chao-Ting; Fang, Jian-Jhih; Chang, Che-Jui; Luo, Chih-Wei; Yabushita, Atsushi; Wu, Kaung-Hsiung; Kobayashi, Takayoshi; 電子物理學系; Department of Electrophysics
2012利用超寬頻激發探測光譜研究P3HT:PCBM太陽能電池之載子超快動力學林照庭; Lin, Chao-Ting; 羅志偉; Luo, Chih-Wei; 電子物理系所
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