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26-七月-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering
26-七月-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering
15-一月-2011Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor depositionChiang, C. H.; Chen, K. M.; Wu, Y. H.; Yeh, Y. S.; Lee, W. I.; Chen, J. F.; Lin, K. L.; Hsiao, Y. L.; Huang, W. C.; Chang, E. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
2009Photoluminescence and Raman studies of GaN films grown by MOCVDLuong Tien Tung; Lin, K. L.; Chang, E. Y.; Huang, W. C.; Hsiao, Y. L.; Chiang, C. H.; 材料科學與工程學系; Department of Materials Science and Engineering
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