標題: The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
作者: Trinh, H. D.
Chang, E. Y.
Wu, P. W.
Wong, Y. Y.
Chang, C. T.
Hsieh, Y. F.
Yu, C. C.
Nguyen, H. Q.
Lin, Y. C.
Lin, K. L.
Hudait, M. K.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: alumina;annealing;energy gap;gallium arsenide;III-V semiconductors;indium compounds;interface states;MOS capacitors;surface treatment;X-ray photoelectron spectra
公開日期: 26-七月-2010
摘要: The inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D-it) at lower half-part of In0.53Ga0.47As band gap. This low D-it was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]
URI: http://dx.doi.org/10.1063/1.3467813
http://hdl.handle.net/11536/150003
ISSN: 0003-6951
DOI: 10.1063/1.3467813
期刊: APPLIED PHYSICS LETTERS
Volume: 97
顯示於類別:期刊論文