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顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
1-一月-2009Characteristics of SrTiO(3) Insulated Layer in SBT Ferroelectric Thin FilmsChou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Characteristics of SrTiO3 Insulated Layer in SBT Ferroelectric Thin FilmsChou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2010Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory FilmsLin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2010Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory FilmsLin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory DevicesLin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory DevicesLin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-七月-2010High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devicesLin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-七月-2010High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devicesLin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation LayerWu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2008Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layerLin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin FilmLin, Meng-Han; Wu, Ming-Chi; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2007Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin filmsLin, Chun-Chieh; Lin, Chih-Yang; Lin, Meng-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011鋯酸鍶基電阻式記憶元件特性與機制之研究林孟漢; Lin, Meng-Han; 曾俊元; Tseng, Tseung-Yuen; 電子研究所
顯示 1 到 13 筆資料，總共 13 筆