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公開日期標題作者
1-一月-20133D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating CurrentHsu, Chung-Wei; Wan, Chia-Chen; Wang, I-Ting; Chen, Mei-Chin; Lo, Chun-Li; Lee, Yao-Jen; Jang, Wen-Yueh; Lin, Chen-Hsi; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2013Bipolar Ni/TiO2/HfO2/Ni RRAM With Multilevel States and Self-Rectifying CharacteristicsHsu, Chung-Wei; Hou, Tuo-Hung; Chen, Mei-Chin; Wang, I-Ting; Lo, Chun-Li; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2013Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar ArrayLo, Chun-Li; Hou, Tuo-Hung; Chen, Mei-Chin; Huang, Jiun-Jia; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013On the Potential of CRS, 1D1R, and 1S1R Crossbar RRAM for Storage-Class MemoryLo, Chun-Li; Chen, Mei-Chin; Huang, Jiun-Jia; Hou, Tuo-Hung; 電子物理學系; Department of Electrophysics
1-十一月-2013Statistical Model and Rapid Prediction of RRAM SET Speed-Disturb DilemmaLuo, Wun-Cheng; Liu, Jen-Chieh; Lin, Yen-Chuan; Lo, Chun-Li; Huang, Jiun-Jia; Lin, Kuan-Liang; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012應用於高密度資料儲存之交錯電阻式記憶體之陣列層級分析羅淳立; Lo, Chun-Li; 侯拓宏; Hou, Tuo-Hung; 電子工程學系 電子研究所
顯示 1 到 6 筆資料，總共 6 筆