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公開日期標題作者
2010Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion ImplantationShiu, Jin-Yu; Lu, Chung-Yu; Su, Ting-Yi; Huang, Rong-Tan; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2007Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTsShiu, Jin-Yu; Huang, Jui-Chien; Desmaris, Vincent; Chang, Chia-Ta; Lu, Chung-Yu; Kumakura, Kazuhide; Makimoto, Toshiki; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-八月-2006Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AIGaN/GaN heterostructuresDesmaris, Vincent; Shiu, Jin-Yu; Lu, Chung-Yu; Rorsman, Niklas; Zirath, Herbert; Chang, Edward-Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2018A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTsLin, Yen-Ku; Bergsten, Johan; Leong, Hector; Malmros, Anna; Chen, Jr-Tai; Chen, Ding-Yuan; Kordina, Olof; Zirath, Herbert; Chang, Edward Yi; Rorsman, Niklas; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
顯示 1 到 4 筆資料，總共 4 筆