1. 目前位置：

瀏覽 的方式： 作者 SU, HP

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 8 筆資料，總共 8 筆
公開日期標題作者
1-二月-1995ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS WITH DOUBLE-ACTIVE-LAYER STRUCTURETSAI, MJ; WANG, PW; SU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1995HIGH-PERFORMANCE NITRIDED OXIDES FABRICATED BY VERY-LOW-PRESSURE NITRIDATION TECHNIQUESU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1995HIGH-PERFORMANCE SUPERTHIN OXIDE/NITRIDE/OXIDE STACKED DIELECTRICS FORMED BY LOW-PRESSURE OXIDATION OF ULTRATHIN NITRIDELIU, HW; SU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1994A NEW PORTRAYAL OF OXIDATION OF UNDOPED POLYCRYSTALLINE SILICON FILMS IN A SHORT-DURATIONWANG, PW; SU, HP; TSAI, MJ; HONG, G; FENG, MS; CHENG, HC; 奈米中心; Nano Facility Center
1-六月-1995NOVEL TUNNELING DIELECTRIC PREPARED BY OXIDATION OF ULTRATHIN RUGGED POLYSILICON FOR 5-V-ONLY NONVOLATILE MEMORIESSU, HP; LIU, HW; WANG, PW; CHENG, PW; JEN, IM; HONG, G; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1995SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMSCHANG, HC; LIU, HW; SU, HP; HONG, G; 奈米中心; Nano Facility Center
1-十一月-1995SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMSCHANG, HC; LIU, HW; SU, HP; HONG, G; 奈米中心; Nano Facility Center
1-十一月-1994SUPERTHIN O/N/O STACKED DIELECTRICS FORMED BY OXIDIZING THIN NITRIDES IN LOW-PRESSURE OXYGEN FOR HIGH-DENSITY MEMORY DEVICESSU, HP; LIU, HW; HONG, G; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 8 筆資料，總共 8 筆