SUPERTHIN O/N/O STACKED DIELECTRICS FORMED BY OXIDIZING THIN NITRIDES IN LOW-PRESSURE OXYGEN FOR HIGH-DENSITY MEMORY DEVICES

標題:	SUPERTHIN O/N/O STACKED DIELECTRICS FORMED BY OXIDIZING THIN NITRIDES IN LOW-PRESSURE OXYGEN FOR HIGH-DENSITY MEMORY DEVICES
作者:	SU, HP LIU, HW HONG, G CHENG, HC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-十一月-1994
摘要:	High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing thin nitride films in low-pressure dry-oxygen at 850-degrees-C for 30 min. Since the nitrides exhibit a better oxidation resistance to the low-pressure dry-oxygen than to the atmospheric-pressure dry-oxygen and wet-oxygen, the low pressure oxidation obtains a thinner oxidized nitride for the high-density dynamic-random-access-memories (DRAM's) and metal-oxide-nitride-oxide-semiconductor (MONO'S) memory devices. In addition, this dielectric possesses low leakage current and excellent time-dependent-dielectric-breakdown (TDDB) characteristics. Therefore, this novel recipe is promising for future ULSI technology.
URI:	http://dx.doi.org/10.1109/55.334660 http://hdl.handle.net/11536/2260
ISSN:	0741-3106
DOI:	10.1109/55.334660
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	15
Issue:	11
起始頁:	440
結束頁:	442
顯示於類別：	期刊論文

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