標題: Excellent low-pressure-oxidized Si3N4 films on roughened poly-si for high-density DRAM's
作者: Liu, HW
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1998
摘要: High-reliability and good-performance stacked storage capacitors with high capacitance value of 17.8 fF/mu m(2) has been realized using low-pressure-oxidized thin nitride films deposited on roughened poly-Si electrodes. This novel electrodes are fabricated by H3PO4-etched and RCA-cleaned. The leakage current density at +2.5 and -2.5 V are 9.07 x 10(-9) and -2.4 x 10(-8) A/cm(2), respectively, fulfilling the requirements of 256 Mb DRAM's. Weibull plots of time-dependent-dielectric-breakdown (TDDB) characteristics under constant current stress and constant voltage stress also show tight distribution and good electrical properties. Hence, this easy and simple technique is promising for future high-density DRAM's applications.
URI: http://dx.doi.org/10.1109/55.709627
http://hdl.handle.net/11536/32417
ISSN: 0741-3106
DOI: 10.1109/55.709627
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 19
Issue: 9
起始頁: 320
結束頁: 322
顯示於類別:期刊論文


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