標題: | Excellent low-pressure-oxidized Si3N4 films on roughened poly-si for high-density DRAM's |
作者: | Liu, HW Cheng, HC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-九月-1998 |
摘要: | High-reliability and good-performance stacked storage capacitors with high capacitance value of 17.8 fF/mu m(2) has been realized using low-pressure-oxidized thin nitride films deposited on roughened poly-Si electrodes. This novel electrodes are fabricated by H3PO4-etched and RCA-cleaned. The leakage current density at +2.5 and -2.5 V are 9.07 x 10(-9) and -2.4 x 10(-8) A/cm(2), respectively, fulfilling the requirements of 256 Mb DRAM's. Weibull plots of time-dependent-dielectric-breakdown (TDDB) characteristics under constant current stress and constant voltage stress also show tight distribution and good electrical properties. Hence, this easy and simple technique is promising for future high-density DRAM's applications. |
URI: | http://dx.doi.org/10.1109/55.709627 http://hdl.handle.net/11536/32417 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.709627 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 19 |
Issue: | 9 |
起始頁: | 320 |
結束頁: | 322 |
顯示於類別: | 期刊論文 |