瀏覽 的方式: 作者 Shih, Cheng Wei

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公開日期標題作者
2016High Mobility SnO2 TFT for Display and Future ICChin, Albert; Shih, Cheng Wei; Lu, Chun Fu; Su, Wei Fang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2019Low-Temperature Processed Tin Oxide Transistor With Ultraviolet IrradiationShih, Cheng Wei; Yen, Te Jui; Chin, Albert; Lu, Chun Fu; Su, Wei Fang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-八月-2016New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap SemiconductorsShih, Cheng Wei; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2017Optical Properties of TiO2 Films Deposited by Reactive Electron Beam SputteringKruchinin, V. N.; Perevalov, T. V.; Atuchin, V. V.; Gritsenko, V. A.; Komonov, A. I.; Korolkov, I. V.; Pokrovsky, L. D.; Shih, Cheng Wei; Chin, Albert; 交大名義發表; National Chiao Tung University
17-一月-2018Remarkably High Hole Mobility Metal-Oxide Thin-Film TransistorsShih, Cheng Wei; Chin, Albert; Lu, Chun Fu; Su, Wei Fang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-四月-2017Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation MaterialShih, Cheng Wei; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics