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公開日期標題作者
1-八月-2004Edge quantum yield in n-channel metal-oxide-semiconductor field-effect transistorKang, TK; Su, KC; Chang, YJ; Chen, MJ; Yeh, SH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2005Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical designLin, MH; Lin, YL; Chen, JM; Yeh, MS; Chang, KP; Su, KC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998Novel input ESD protection circuit with substrate-triggering technique in a 0.25-mu m shallow-trench-isolation CMOS technologyKer, MD; Chen, TY; Wu, CY; Tang, H; Su, KC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Plausible origin of electromigration lifetime extrapolation difference between wafer level isothermal test and package level constant current testWang, CS; Chen, MJ; Chang, WC; Ke, WS; Lee, CF; Su, KC; Chou, EN; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2002RF noise characteristics of high-k AlTiOx and Al2O3 gate dielectricsChen, SB; Huang, CH; Chin, A; Lin, J; Jou, JP; Su, KC; Liu, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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