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公開日期標題作者
1-三月-2018Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET DevicesSu, Ping-Hsun; Li, Yiming; 電機工程學系; Department of Electrical and Computer Engineering
1-一月-2014Design Optimization of 16-nm Bulk FinFET Technology via Geometric ProgrammingSu, Ping-Hsun; Li, Yiming; 傳播研究所; Institute of Communication Studies
1-五月-2015Determination of Source-and-Drain Series Resistance in 16-nm-Gate FinFET DevicesSu, Ping-Hsun; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
六月-2016Exploration of Inter-Die Bulk Fin-Typed Field Effect Transistor Process Variation for Reduction of Device VariabilitySu, Ping-Hsun; Li, Yiming; 交大名義發表; 傳播研究所; 電機學院; National Chiao Tung University; Institute of Communication Studies; College of Electrical and Computer Engineering
1-二月-2017Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistorsMizubayashi, Wataru; Noda, Shuichi; Ishikawa, Yuki; Nishi, Takashi; Kikuchi, Akio; Ota, Hiroyuki; Su, Ping-Hsun; Li, Yiming; Samukawa, Seiji; Endo, Kazuhiko; 交大名義發表; National Chiao Tung University
2016Process Technological Analysis for Dynamic Characteristic Improvement of 16-nm HKMG Bulk FinFET CMOS CircuitsSu, Ping-Hsun; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
八月-2016Process-Dependence Analysis for Characteristic Improvement of Ring Oscillator Using 16-nm Bulk FinFET DevicesSu, Ping-Hsun; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
1-五月-2015Source/Drain Series Resistance Extraction in HKMG Multifin Bulk FinFET DevicesSu, Ping-Hsun; Li, Yiming; 電機資訊學士班; Undergraduate Honors Program of Electrical Engineering and Computer Science
八月-2016A Systematic Approach to Correlation Analysis of In-Line Process Parameters for Process Variation Effect on Electrical Characteristic of 16-nm HKMG Bulk FinFET DevicesSu, Ping-Hsun; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
顯示 1 到 9 筆資料，總共 9 筆