Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET Devices

Abstract

This research explores the electrical characteristics of the unity gain frequency (F-t) in relation to the experimental in-line process parameters of 16-nm high-kappa metal gate bulk fin-type field effect transistor devices. Because F-t is dependent on the transconductance (G(m)) and effective gate capacitance (C-gg), a sensitivity analysis of these two factors is applied to determine key in-line process parameters. The engineering results of this letter indicate that G(m) and C-gg are significantly fluctuated by six in-line process parameters, including the gate length, fin height, high-kappa/interfacial layer thickness, source/drain (S/D) proximity, S/D depth, and gate height. These six parameters fluctuate F-t at the same time, withGm as the dominant factor.