標題: Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET Devices
作者: Su, Ping-Hsun
Li, Yiming
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: In-line process parameters;bulk FinFETs;unity gain frequency;transconductance;characteristic fluctuation
公開日期: 1-Mar-2018
摘要: This research explores the electrical characteristics of the unity gain frequency (F-t) in relation to the experimental in-line process parameters of 16-nm high-kappa metal gate bulk fin-type field effect transistor devices. Because F-t is dependent on the transconductance (G(m)) and effective gate capacitance (C-gg), a sensitivity analysis of these two factors is applied to determine key in-line process parameters. The engineering results of this letter indicate that G(m) and C-gg are significantly fluctuated by six in-line process parameters, including the gate length, fin height, high-kappa/interfacial layer thickness, source/drain (S/D) proximity, S/D depth, and gate height. These six parameters fluctuate F-t at the same time, withGm as the dominant factor.
URI: http://dx.doi.org/10.1109/LED.2018.2791436
http://hdl.handle.net/11536/144637
ISSN: 0741-3106
DOI: 10.1109/LED.2018.2791436
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 39
起始頁: 335
結束頁: 338
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