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公開日期標題作者
2004Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETsChan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trappingChan, CT; Ma, HC; Tang, CJ; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2006A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transientWang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Positive bias and temperature stress induced two-stage drain current degradation in HfSiON nMOSFET'sChan, CT; Tang, CJ; Wang, T; Wang, HCH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETsChan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆