標題: | Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs |
作者: | Chan, CT Tang, CJ Kuo, CH Ma, HC Tsai, CW Wang, HCH Chi, MH Wang, T 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | high-k gate dielectric;HfSiON;traps;single electron;emission;thermally-assisted tunneling |
公開日期: | 2005 |
摘要: | A novel method for characterizing MOSFETs with HfSiON high-k gate dielectric is demonstrated for the first time by direct measurement of single-electron de-trapping. Individual high-k trapped electron emission is recorded, which is manifested by the step-like evolution of channel current. The physical path of electron de-trapping can be identified from the emission time of such single-electron de-trapping. The dependence of charge emission time on gate voltage and temperature is measured. An analytical model based on thermally assisted tunneling can predict the emission time behavior, trap activation energy, trap density, and total available traps in high-k gate dielectric. |
URI: | http://hdl.handle.net/11536/17743 http://dx.doi.org/10.1109/RELPHY.2005.1493059 |
ISBN: | 0-7803-8803-8 |
DOI: | 10.1109/RELPHY.2005.1493059 |
期刊: | 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL |
起始頁: | 41 |
結束頁: | 44 |
顯示於類別: | 會議論文 |