標題: Investigation of Post-NBT Stress Current Instability Modes in HfSiON Gate Dielectric pMOSFETs by Measurement of Individual Trapped Charge Emissions
作者: Ma, H. C.
Chiu, J. P.
Tang, C. J.
Wang, Tahui
Chang, C. S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: Bipolar charge detrapping induced current instability in HfSiON gate dielectric pMOSFETs after negative bias and temperature stress is studied by using a fast transient measurement technique. Both single electron and single hole emissions are observed, leading to post-stress current degradation and recovery, respectively. The NBT stress voltage and temperature effect on post-stress current evolution is explored. Clear evidence of electron and hole trapping in NBT stress is demonstrated. A bipolar charge trapping/detrapping model and charge detrapping paths based on measured charge emission times are proposed.
URI: http://hdl.handle.net/11536/15192
http://dx.doi.org/10.1109/IRPS.2009.5173223
ISBN: 978-1-4244-2888-5
DOI: 10.1109/IRPS.2009.5173223
期刊: 2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2
起始頁: 51
結束頁: 54
顯示於類別:會議論文


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