標題: | Investigation of Post-NBT Stress Current Instability Modes in HfSiON Gate Dielectric pMOSFETs by Measurement of Individual Trapped Charge Emissions |
作者: | Ma, H. C. Chiu, J. P. Tang, C. J. Wang, Tahui Chang, C. S. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2009 |
摘要: | Bipolar charge detrapping induced current instability in HfSiON gate dielectric pMOSFETs after negative bias and temperature stress is studied by using a fast transient measurement technique. Both single electron and single hole emissions are observed, leading to post-stress current degradation and recovery, respectively. The NBT stress voltage and temperature effect on post-stress current evolution is explored. Clear evidence of electron and hole trapping in NBT stress is demonstrated. A bipolar charge trapping/detrapping model and charge detrapping paths based on measured charge emission times are proposed. |
URI: | http://hdl.handle.net/11536/15192 http://dx.doi.org/10.1109/IRPS.2009.5173223 |
ISBN: | 978-1-4244-2888-5 |
DOI: | 10.1109/IRPS.2009.5173223 |
期刊: | 2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 |
起始頁: | 51 |
結束頁: | 54 |
顯示於類別: | 會議論文 |