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公開日期標題作者
1-一月-2006Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping techniqueGu, SH; Wang, TH; Lu, WP; Ting, WC; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2004Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodologyZous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2004A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cellYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2005A novel fully CMOS process compatible PREM for SOC applicationsYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2005A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applicationsYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Chen, MS; Liao, YY; Ting, WC; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2004Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cellLiu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics