瀏覽 的方式: 作者 Tran, B. T.

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公開日期標題作者
1-六月-2011Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-六月-2011Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2011Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatmentsTrinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2011Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatmentsTrinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T.; 材料科學與工程學系; Department of Materials Science and Engineering