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公開日期標題作者
1-一月-1999Exciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dotsShen, JX; Oka, Y; Cheng, HH; Tsai, FY; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1998InGaAs/GaAs quantum dots on (111)B GaAs substratesTsai, FY; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001InGaAs/GaAs quantum wells and quantum dots on (111)B orientationTyan, SL; Lin, YG; Tsai, FY; Lee, CP; Shields, PA; Nicholas, RJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1998Magneto-luminescence of quasi-zero dimensional In0.25Ga0.75As/GaAs quantum dotsCheng, HH; Nicholas, RJ; Priest, A; Tsai, FY; Lee, CP; Sanchez-Dehesa, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2000Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrateTyan, SL; Shields, PA; Nicholas, RJ; Tsai, FY; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1999Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substratesTsai, FY; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1999Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substratesTsai, FY; Lee, CP; Shen, JX; Oka, Y; Cheng, HH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-六月-2001Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fieldsTsai, FY; Lee, CP; Voskoboynikov, O; Cheng, HH; Shen, JX; Oka, Y; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 8 筆資料，總共 8 筆