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公開日期標題作者
1-十一月-1996Characterization of boron silicide layer deposited by ultrahigh-vacuum chemical-vapor depositionTseng, HC; Pan, FM; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-十月-1997Effects of isolation materials on facet formation for silicon selective epitaxial growthTseng, HC; Chang, CY; Pan, FM; Chen, JR; Chen, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1997Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growthTseng, HC; Chang, CY; Pan, FM; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1997Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growthTseng, HC; Chang, CY; Pan, FM; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2005Extraction of substrate parameters for RF MOSFETs based on four-port measurementWu, SD; Huang, GW; Chen, KM; Chang, CY; Tseng, HC; Hsu, TL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2004Hot-carrier effects on power characteristics of SiGeHBTsHuang, SY; Chen, KM; Huang, GW; Tseng, HC; Hsu, TL; Chang, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2005Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Hsu, TL; Tseng, HC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Impact of hot carrier stress on RF power characteristics of MOSFETsHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2005Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxyLee, YJ; Tseng, HC; Kuo, HC; Wang, SC; Chang, CW; Hsu, TC; Yang, YL; Hsieh, MH; Jou, MJ; Lee, BJ; 光電工程學系; Department of Photonics
1-七月-2005Linearity and power characteristics of SiGeHBTs at high temperatures for RF applicationsChen, KM; Peng, AS; Huang, GW; Chen, HY; Huang, SY; Chang, CY; Tseng, HC; Hsu, TL; Liang, V; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1997Low temperature epitaxy of Si and Si1-xGex by utrahigh vacuum-chemical molecular epitaxyHuang, GW; Chen, LP; Chou, CT; Chen, KM; Tseng, HC; Tasi, WC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1996Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistorsLin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1996Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistorsLin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2005RF MOSFET characterization by four-port measurementWu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1997The role of a resist during O-2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxidesChien, CH; Chang, CY; Lin, HC; Chang, TF; Hsien, SK; Tseng, HC; Chiou, SG; Huang, TY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
1-九月-2003Study of nickel silicide contact on Si/Si1-xGexYang, TH; Luo, GL; Chang, EY; Yang, TY; Tseng, HC; Chang, CY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr