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2-二月-1998Alterable temperature-dependent wavelength shifts in (InP)(2)/(GaP)(2) quantum wellsCheng, YC; Tai, K; Chou, ST; Huang, KF; Tu, SL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-六月-1997Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structuresChen, SS; Lin, CC; Lan, WH; Tu, SL; Peng, CK; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-1997Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structuresChen, SS; Lin, CC; Lan, WH; Tu, SL; Peng, CK; 材料科學與工程學系; Department of Materials Science and Engineering
1-十二月-1996Growth and fatigue properties of pulsed laser deposited Pb1-xLax(ZryTiz)O-3 thin films with [001] preferred orientationLin, WJ; Tseng, TY; Wu, YZ; Lin, SP; Tu, SL; Chang, H; Yang, SJ; Lin, IN; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1996High performance non-alloyed pseudomorphic high electron mobility transistorsPeng, CK; Lan, WH; Tu, SL; Yang, SJ; Chen, SS; Lin, CC; 材料科學與工程學系; Department of Materials Science and Engineering
1-五月-1997Influence of crystal structure on the fatigue properties of Pb1-xLax(Zr-y,Ti-z)O-3 thin films prepared by pulsed-laser deposition techniqueLin, WJ; Tseng, TY; Lin, SP; Tu, SL; Chang, H; Yang, SJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1997Influence of crystal structure on the fatigue properties of Pb1-xLax(Zr-y,Ti-z)O-3 thin films prepared by pulsed-laser deposition techniqueLin, WJ; Tseng, TY; Lin, SP; Tu, SL; Chang, H; Yang, SJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Optical image recognition using photorefractive crystal platesHsieh, ML; Lin, SH; Hsu, KY; Hsieh, TC; Lin, SP; Yeh, TS; Hu, LJ; Tu, SL; Chang, H; 交大名義發表; 光電工程學系; National Chiao Tung University; Department of Photonics
15-二月-1998Ordering reduction in In0.5Ga0.5P grown by solid source molecular beam epitaxyCheng, YC; Tai, KC; Chou, ST; Huang, KF; Tu, SL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-十二月-1998Sputtered Cr and reactively sputtered CrNx serving as barrier layers against copper diffusionChuang, JC; Tu, SL; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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