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公開日期標題作者
2009Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed OperationChen, Yu-Sheng; Wu, Tai-Yuan; Tzeng, Pei-Jer; Chen, Pang-Shiu; Lee, Heng-Yuan; Lin, Cha-Hsin; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2009Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator SubstrateLu, Chi-Pei; Luo, Cheng-Kei; Tsui, Bing-Yue; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2010A process for high yield and high performance carbon nanotube field effect transistorsLee, Tseng-Chin; Tsui, Bing-Yue; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Trigate TiN Nanocrystal Memory with High-k Blocking Dielectric and High Work Function Gate ElectrodeLu, Chi-Pei; Tsui, Bing-Yue; Luo, Cheng-Kei; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2008Using spike-anneal to reduce interfacial layer thickness and leakage current in metal-oxide-semiconductor devices with TaN/Atomic layer deposition-grown HfAlO/chemical oxide/Si structureTsai, Bo-An; Lee, Yao-Jen; Peng, Hsin-Yi; Tzeng, Pei-Jer; Luo, Chih-wei; Chang-Liao, Kuei-Shu; 電子物理學系; Department of Electrophysics
顯示 1 到 5 筆資料，總共 5 筆