瀏覽 的方式： 作者 Tzeng, Pei-Jer
顯示 1 到 5 筆資料，總共 5 筆
| 公開日期 | 標題 | 作者 |
| 2009 | Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed Operation | Chen, Yu-Sheng; Wu, Tai-Yuan; Tzeng, Pei-Jer; Chen, Pang-Shiu; Lee, Heng-Yuan; Lin, Cha-Hsin; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-2009 | Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate | Lu, Chi-Pei; Luo, Cheng-Kei; Tsui, Bing-Yue; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-2010 | A process for high yield and high performance carbon nanotube field effect transistors | Lee, Tseng-Chin; Tsui, Bing-Yue; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2009 | Trigate TiN Nanocrystal Memory with High-k Blocking Dielectric and High Work Function Gate Electrode | Lu, Chi-Pei; Tsui, Bing-Yue; Luo, Cheng-Kei; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-2008 | Using spike-anneal to reduce interfacial layer thickness and leakage current in metal-oxide-semiconductor devices with TaN/Atomic layer deposition-grown HfAlO/chemical oxide/Si structure | Tsai, Bo-An; Lee, Yao-Jen; Peng, Hsin-Yi; Tzeng, Pei-Jer; Luo, Chih-wei; Chang-Liao, Kuei-Shu; 電子物理學系; Department of Electrophysics |
