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10-六月-19912-DIMENSIONAL ELECTRON GASES IN DELTA-DOPED GAAS/IN0.25GA0.75AS/GAAS HETEROSTRUCTURESLIN, W; HSU, WC; WU, TS; CHANG, SZ; WANG, C; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1995Complementary-LVTSCR ESD protection scheme for submicron CMOS IC'sKER, MD; WU, CY; CHANG, HH; CHENG, T; WU, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1991THE DELTA-DOPED IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES PREPARED BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITIONCHANG, CY; LIN, W; HSU, WC; WU, TS; CHANG, SZ; WANG, C; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1993EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURETSUI, BY; TSAI, JY; WU, TS; CHEN, MC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-四月-1991NEW PHYSICAL TIMING MODELS OF BIPOLAR NONSATURATION LOGIC USING CURRENT DOMAIN ANALYSIS TECHNIQUEWU, CY; WU, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1990PHYSICAL TIMING MODELS AND DESIGN METHODOLOGY OF BIPOLAR NONTHRESHOLD LOGIC-CIRCUITSWU, CY; WU, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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