標題: | 2-DIMENSIONAL ELECTRON GASES IN DELTA-DOPED GAAS/IN0.25GA0.75AS/GAAS HETEROSTRUCTURES |
作者: | LIN, W HSU, WC WU, TS CHANG, SZ WANG, C CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
公開日期: | 10-六月-1991 |
摘要: | Delta-doped (delta-doped) GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (delta-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The delta-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9 X 10(13) cm-2) can be realized. Experimental results show that a structure with an 80 angstrom In0.25Ga0.75As layer as the active channel and an 80 angstrom spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs. |
URI: | http://dx.doi.org/10.1063/1.104806 http://hdl.handle.net/11536/3756 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.104806 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 58 |
Issue: | 23 |
起始頁: | 2681 |
結束頁: | 2683 |
顯示於類別: | 期刊論文 |