Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates

標題:	Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates
作者:	Lin, SD Lee, CP Hsieh, WH Suen, YW 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	14-十月-2002
摘要:	The growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2-2.0 nm and a period about 23 nm. Using an In0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed. (C) 2002 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.1515878 http://hdl.handle.net/11536/28455
ISSN:	0003-6951
DOI:	10.1063/1.1515878
期刊:	APPLIED PHYSICS LETTERS
Volume:	81
Issue:	16
起始頁:	3007
結束頁:	3009
顯示於類別：	期刊論文

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