標題: 2-DIMENSIONAL ELECTRON GASES IN DELTA-DOPED GAAS/IN0.25GA0.75AS/GAAS HETEROSTRUCTURES
作者: LIN, W
HSU, WC
WU, TS
CHANG, SZ
WANG, C
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 10-Jun-1991
摘要: Delta-doped (delta-doped) GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (delta-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The delta-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9 X 10(13) cm-2) can be realized. Experimental results show that a structure with an 80 angstrom In0.25Ga0.75As layer as the active channel and an 80 angstrom spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.
URI: http://dx.doi.org/10.1063/1.104806
http://hdl.handle.net/11536/3756
ISSN: 0003-6951
DOI: 10.1063/1.104806
期刊: APPLIED PHYSICS LETTERS
Volume: 58
Issue: 23
起始頁: 2681
結束頁: 2683
Appears in Collections:Articles