標題: | HIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES |
作者: | KAO, MJ HSU, WC SHIEH, HM LIU, WC CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
關鍵字: | DELTA-DOPING;HFET;DDCFET;MOCVD;INGAAS/GAAS QW;HIGH CARRIER DENSITY;HIGH MOBILITY |
公開日期: | 1-一月-1995 |
摘要: | Double-quantum-well GaAs/InGaAs/GaAs pseudomorphic heterostructures by delta-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 10(13) cm-2 along with an enhanced mobility of 2100 cm2/V.s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated. |
URI: | http://dx.doi.org/10.1143/JJAP.34.L1 http://hdl.handle.net/11536/2126 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.34.L1 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 34 |
Issue: | 1A |
起始頁: | L1 |
結束頁: | L3 |
顯示於類別: | 期刊論文 |