標題: HIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES
作者: KAO, MJ
HSU, WC
SHIEH, HM
LIU, WC
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: DELTA-DOPING;HFET;DDCFET;MOCVD;INGAAS/GAAS QW;HIGH CARRIER DENSITY;HIGH MOBILITY
公開日期: 1-Jan-1995
摘要: Double-quantum-well GaAs/InGaAs/GaAs pseudomorphic heterostructures by delta-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 10(13) cm-2 along with an enhanced mobility of 2100 cm2/V.s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.
URI: http://dx.doi.org/10.1143/JJAP.34.L1
http://hdl.handle.net/11536/2126
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.L1
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 34
Issue: 1A
起始頁: L1
結束頁: L3
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