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公開日期標題作者
1-一月-2002Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devicesWang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2005Continuous and precise work function adjustment for integratable dual metal gate CMOS technology using Hf-Mo binary alloysLi, TL; Hu, CH; Ho, WL; Wang, HCH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2000Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technologyWang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2001Interface induced uphill diffusion of boron: An effective approach for ultrashallow junctionWang, HCH; Wang, CC; Chang, CS; Wang, TH; Griffin, PB; Diaz, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2006Novel dual-metal gate technology using Mo-MoSix combinationLi, TL; Ho, WL; Chen, HB; Wang, HCH; Chang, CY; Hu, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2006A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transientWang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Positive bias and temperature stress induced two-stage drain current degradation in HfSiON nMOSFET'sChan, CT; Tang, CJ; Wang, T; Wang, HCH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETsChan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics