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顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
1-十二月-2018AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As OxidantsWang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-2012Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor CapacitorsTrinh, Hai-Dang; Lin, Yueh-Chin; Wang, Huan-Chung; Chang, Chia-Hua; Kakushima, Kuniyuki; Iwai, Hiroshi; Kawanago, Takamasa; Lin, Yan-Gu; Chen, Chi-Ming; Wong, Yuen-Yee; Huang, Guan-Ning; Hudait, Mantu; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-十月-2014GaN MIS-HEMTs With Nitrogen Passivation for Power Device ApplicationsLiu, Shih-Chien; Chen, Bo-Yuan; Lin, Yueh-Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-七月-2014Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation LayerHsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2014Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation LayerHsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2018High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-m Omega.cm(2) for Power Device ApplicationsWang, Huan-Chung; Lumbantoruan, Franky Juanda; Hsieh, Ting-En; Wu, Chia-Hsun; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-七月-2018High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device ApplicationsWu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2017Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate FabricationWang, Huan-Chung; Su, Huan-Fu; Luc, Quang-Ho; Lee, Ching-Ting; Hsu, Heng-Tung; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2018Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion ImplantationWu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-八月-2019Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device ApplicationsWu, Chia-Hsun; Chen, Jian-You; Han, Ping-Cheng; Lee, Ming-Wen; Yang, Kun-Sheng; Wang, Huan-Chung; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Dee, Chang-Fu; Hamzah, Azrul Azlan; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-七月-2014Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric EffectTsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2014Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric EffectTsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-2019A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effectsNagarajan, Venkatesan; Chen, Kun-Ming; Wang, Huan-Chung; Singh, Sankalp Kumar; Anandan, Deepak; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 13 筆資料，總共 13 筆