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公開日期標題作者
9-三月-2016Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect TransistorsZou, Xuming; Huang, Chun-Wei; Wang, Lifeng; Yin, Long-Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen-Wei; He, Lin; Chen, Shanshan; Ho, Johnny C.; Liao, Lei; 材料科學與工程學系; Department of Materials Science and Engineering
5-十月-2016High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling LayerWang, Jingli; Yao, Qian; Huang, Chun-Wei; Zou, Xuming; Liao, Lei; Chen, Shanshan; Fan, Zhiyong; Zhang, Kai; Wu, Wei; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen-Wei; 材料科學與工程學系; Department of Materials Science and Engineering
24-九月-2014Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect TransistorsZou, Xuming; Wang, Jingli; Chiu, Chung-Hua; Wu, Yun; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen-Wei; Mai, Liqiang; Chen, Tangsheng; Li, Jinchai; Ho, Johnny C.; Liao, Lei; 交大名義發表; 材料科學與工程學系; National Chiao Tung University; Department of Materials Science and Engineering
1-十二月-2015Low Interface Trap Densities and Enhanced Performance of AlGaN/GaNMOS High-Electron Mobility Transistors Using Thermal Oxidized Y2O3 InterlayerLiao, Chongnan; Zou, Xuming; Huang, Chun-Wei; Wang, Jingli; Zhang, Kai; Kong, Yuechan; Chen, Tangsheng; Wu, Wen-Wei; Xiao, Xiangheng; Jiang, Changzhong; Liao, Lei; 材料科學與工程學系; Department of Materials Science and Engineering
30-三月-2016Rational Design of ZnO:H/ZnO Bilayer Structure for High Performance Thin-Film TransistorsAbliz, Ablat; Huang, Chun-Wei; Wang, Jingli; Xu, Lei; Liao, Lei; Xiao, Xiangheng; Wu, Wen-Wei; Fan, Zhiyong; Jiang, Changzhong; Li, Jinchai; Guo, Shishang; Liu, Chuansheng; Guo, Tailiang; 材料科學與工程學系; Department of Materials Science and Engineering
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