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公開日期標題作者
1-八月-2014Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation LayerQuang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-七月-2008GaN growth on Si(111) using simultaneous AlN/alpha-Si(3)N(4) buffer structureChang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-七月-2008GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structureChang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen; 材料科學與工程學系; 電子物理學系; 電子工程學系及電子研究所; 電子與資訊研究中心; Department of Materials Science and Engineering; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics; Microelectronics and Information Systems Research Center
1-一月-2012The Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.Hong Quan Nguyen; Hai Dang Trinh; Yu, Hung Wei; Hsu, Ching Hsiang; Chung, Chen Chen; Binh Tinh Tran; Wong, Yuen Yee; Thanh Hoa Phan Van; Quang Ho Luc; Chiou, Diao Yuan; Chi Lang Nguyen; Dee, Chang Fu; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
15-三月-2009Growth of free-standing GaN layer on Si(111) substrateYang, Tsung Hsi; Ku, Jui Tai; Chang, Jet-Rung; Shen, Shih-Guo; Chen, Yi-Cheng; Wong, Yuen Yee; Chou, Wu Ching; Chen, Chien-Ying; Chang, Chun-Yen; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
四月-2016Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperaturesHuang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
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