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公開日期標題作者
10-十二月-2010Controllable oxygen vacancies to enhance resistive switching performance in a ZrO(2)-based RRAM with embedded Mo layerWang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-十二月-2010Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layerWang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2014Resistive Switching and Rectification Characteristics with CoO/ZrO2 Double LayersTsai, Tsung-Ling; Wu, Jia-Woei; Tseng, Tseng-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2013Unipolar Resistive Switching in ZrO2 Thin FilmsZhang, Guo-Yong; Lee, Dai-Ying; Yao, I-Chuan; Hung, Chung-Jung; Wang, Sheng-Yu; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2010以氧化鋯製備雙層結構電阻式記憶體於單極性電阻轉態特性之研究吳家瑋; Wu, Jia-Woei; 曾俊元; Tseng, Tseung-Yuen; 電子研究所
顯示 1 到 5 筆資料，總共 5 筆