1. 目前位置：

瀏覽 的方式： 作者 Wu, Ming-Chi

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 15 筆資料，總共 15 筆
公開日期標題作者
1-八月-2010Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory FilmsLin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2010Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory FilmsLin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory DevicesLin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory DevicesLin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-七月-2010High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devicesLin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-七月-2010High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devicesLin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation LayerWu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2008Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layerLin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2011Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAMWu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2011Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAMWu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin FilmLin, Meng-Han; Wu, Ming-Chi; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2012Robust unipolar resistive switching of Co nano-dots embedded ZrO(2) thin film memories and their switching mechanismWu, Ming-Chi; Wu, Tsung-Han; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2012Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanismWu, Ming-Chi; Wu, Tsung-Han; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2012A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architectureWu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013以電激發砷化鎵塊材為兆赫波增益介質之研究吳明錡; Wu, Ming-Chi; 顏順通; Yen, Shun-Tung; 電子工程學系 電子研究所
顯示 1 到 15 筆資料，總共 15 筆