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國立陽明交通大學機構典藏
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公開日期
標題
作者
1-八月-2010
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films
Lin, Meng-Han
;
Wu, Ming-Chi
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-八月-2010
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films
Lin, Meng-Han
;
Wu, Ming-Chi
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-四月-2011
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices
Lin, Meng-Han
;
Wu, Ming-Chi
;
Huang, Yi-Han
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-四月-2011
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices
Lin, Meng-Han
;
Wu, Ming-Chi
;
Huang, Yi-Han
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
28-七月-2010
High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices
Lin, Meng-Han
;
Wu, Ming-Chi
;
Huang, Chun-Yang
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
28-七月-2010
High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices
Lin, Meng-Han
;
Wu, Ming-Chi
;
Huang, Chun-Yang
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2010
Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer
Wu, Ming-Chi
;
Lin, Meng-Han
;
Yeh, Yu-Ting
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-十月-2008
Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
Lin, Chih-Yang
;
Lin, Meng-Han
;
Wu, Ming-Chi
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-八月-2011
Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM
Wu, Ming-Chi
;
Lin, Yi-Wei
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-八月-2011
Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
Wu, Ming-Chi
;
Lin, Yi-Wei
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2009
Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film
Lin, Meng-Han
;
Wu, Ming-Chi
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-一月-2012
Robust unipolar resistive switching of Co nano-dots embedded ZrO(2) thin film memories and their switching mechanism
Wu, Ming-Chi
;
Wu, Tsung-Han
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-一月-2012
Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism
Wu, Ming-Chi
;
Wu, Tsung-Han
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-六月-2012
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
Wu, Ming-Chi
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2013
以電激發砷化鎵塊材為兆赫波增益介質之研究
吳明錡
;
Wu, Ming-Chi
;
顏順通
;
Yen, Shun-Tung
;
電子工程學系 電子研究所