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公開日期標題作者
2012Advanced Metal-Gate/High-kappa CMOS with Small EOT and Better High Field MobilityChin, Albert; Chen, W. B.; Chen, P. C.; Wu, Y. H.; Chi, C. C.; Lee, Y. J.; Chang-Liao, K. S.; Kuan, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-八月-2010Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layerChen, J. F.; Chen, Ross C. C.; Chiang, C. H.; Chen, Y. F.; Wu, Y. H.; Chang, L.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-一月-2017Channel Modification Engineering by Plasma Processing in Tin-Oxide Thin Film Transistor: Experimental Results and First-Principles CalculationChiu, Y. C.; Chen, P. C.; Chang, S. L.; Zheng, Z. W.; Cheng, C. H.; Liou, G. L.; Kao, H. L.; Wu, Y. H.; Chang, C. Y.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
15-七月-2008Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dotsChen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-二月-2007Effect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMTChu, L. H.; Chang, E. Y.; Chang, L.; Wu, Y. H.; Chen, S. H.; Hsu, H. T.; Lee, T. L.; Lien, Y. C.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
15-十二月-2010Electron delocalization of tensily strained GaAs quantum dots in GaSb matrixLin, T. C.; Wu, Y. H.; Li, L. C.; Sung, Y. T.; Lin, S. D.; Chang, L.; Suen, Y. W.; Lee, C. P.; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
13-十月-2008Geometrical correlations of quantum dots in InAs/GaAs superlattice structure from electron tomographyWu, Y. H.; Chang, L.; Chen, L. C.; Chen, H. S.; Chen, F. R.; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2012Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxideCheng, C. H.; Chen, P. C.; Wu, Y. H.; Wu, M. J.; Yeh, F. S.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2012How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?Chen, J. F.; Lin, Y. C.; Chiang, C. H.; Chen, Ross C. C.; Chen, Y. F.; Wu, Y. H.; Chang, L.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-八月-2011Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimonyChiang, C. H.; Wu, Y. H.; Hsieh, M. C.; Yang, C. H.; Wang, J. F.; Chen, Ross C. C.; Chang, L.; Chen, J. F.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
25-二月-2008Interfacial reactions of Pt-based Schottky contacts on nGaPChu, L. H.; Chang, E. Y.; Wu, Y. H.; Huang, J. C.; Chen, Q. Y.; Chu, W. K.; Seo, H. W.; Lee, C. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-十二月-2011Long-Endurance Nanocrystal TiO(2) Resistive Memory Using a TaON Buffer LayerCheng, C. H.; Chen, P. C.; Wu, Y. H.; Yeh, F. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2011Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer LayerCheng, C. H.; Chen, P. C.; Wu, Y. H.; Yeh, F. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-一月-2011Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor depositionChiang, C. H.; Chen, K. M.; Wu, Y. H.; Yeh, Y. S.; Lee, W. I.; Chen, J. F.; Lin, K. L.; Hsiao, Y. L.; Huang, W. C.; Chang, E. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
5-九月-2007Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dotsChen, J. F.; Wang, Y. Z.; Chiang, C. H.; Hsiao, R. S.; Wu, Y. H.; Chang, L.; Wang, J. S.; Chi, T. W.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
5-六月-2006Strain relaxation and induced defects in InAsSb self-assembled quantum dotsChen, J. F.; Hsiao, R. S.; Huang, W. D.; Wu, Y. H.; Chang, L.; Wang, J. S.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-十一月-2008Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporationChen, J. F.; Yang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
21-九月-2009Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layerWu, Y. H.; Chang, Li; Lin, P. Y.; Chiang, C. H.; Chen, J. F.; Chi, T. W.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
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