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公開日期標題作者
9-一月-1995EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-CLIU, CC; LEE, CY; CHENG, KL; CHENG, HC; YEW, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1995MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees CCHENG, KL; LIU, CC; CHENG, HC; LEE, CY; YEW, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURESCHENG, KL; CHENG, HC; LIU, CC; LEE, C; YEW, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURESCHENG, KL; CHENG, HC; LIU, CC; LEE, C; YEW, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1995VERY-LOW TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SI FILMS FABRICATED BY HYDROGEN DILUTION WITH ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITIONWANG, KC; CHENG, KL; JIANG, YL; YEW, TR; HWANG, HL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆