<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C

Thumbnail Image

Date

1995-01-09

Authors





Journal Title

Journal ISSN

Volume Title

Publisher

DOI

10.1063/1.113552

Abstract

Description

Keywords

Citation

URI

http://dx.doi.org/10.1063/1.113552
 https://ir.lib.nycu.edu.tw/handle/11536/2104

Collections

期刊論文;;Articles

Endorsement

Review

Supplemented By

Referenced By