| 标题: | EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C |
| 作者: | LIU, CC LEE, CY CHENG, KL CHENG, HC YEW, TR 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公开日期: | 9-一月-1995 |
| URI: | http://dx.doi.org/10.1063/1.113552 http://hdl.handle.net/11536/2104 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.113552 |
| 期刊: | APPLIED PHYSICS LETTERS |
| Volume: | 66 |
| Issue: | 2 |
| 起始页: | 168 |
| 结束页: | 170 |
| 显示于类别： | Articles |
- Effects of CH4/SiH4 flow ratio and microwave power on the growth of beta-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 degrees C / Lee, WH;Lin, JC;Lee, C;Cheng, HC;Yew, TR
- A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature / Lee, WH;Lin, JC;Lee, C;Cheng, HC;Yew, TR
- Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2 / Liu, CC;Lee, CP;Cheng, KL;Cheng, HC;Yew, TR
Loading...