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Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
2004The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technologyChung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2006Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stackChung, SS; Yeh, CH; Feng, HJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devicesChen, SJ; Lin, TC; Lo, DK; Yang, JJ; Chung, SS; Kao, TY; Shiue, RY; Wang, CJ; Peng, YK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Localization of NBTI-induced oxide damage in direct tunneling regime gate oxide pMOSFET using a novel low gate-leakage gated-diode (L-2-GD) methodChung, SS; Lo, DK; Yang, JJ; Lin, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999Magnetic analysis of a micromachined magnetic actuator using the finite element methodKo, CH; Yang, JJ; Chiou, JC; Chen, SC; Kao, TH; 電控工程研究所; Institute of Electrical and Control Engineering
1-Jul-1999A new approach for characterizing structure-dependent hot-carrier effects in drain-engineered MOSFET'sChung, SS; Yang, JJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2001New degradation mechanisms of width-dependent hot carrier effect in quarter-micron shallow-trench-isolated p-channel metal-oxide-semiconductor field-effect-transistorsChung, SS; Chen, SJ; Yang, WJ; Yih, CM; Yang, JJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001A new physical and quantitative width dependent hot carrier model for shallow-trench-isolated CMOS devicesChung, SS; Chen, SJ; Yang, WJ; Yang, JJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2001Quantitative investigation of hot carrier induced drain current degradation in submicron drain-engineered metal-oxide-semiconductor field-effect-transistorsYang, JJ; Chung, SSS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 9 of 9