1. 目前位置：

瀏覽 的方式： 作者 Yang, JY

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 20 筆資料，總共 21 筆  下一頁 >
公開日期標題作者
1-四月-2004Characterization of hydrogen-treated pentacene organic thin film transistorsYang, JY; Suen, SC; Whang, WT; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-1998A CVD epitaxial deposition in a vertical barrel reactor: Process modeling using cluster-based fuzzy logic modelsChiou, JC; Yang, JY; 電控工程研究所; Institute of Electrical and Control Engineering
1-七月-1996Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactorChang, KM; Yeh, TH; Wang, SW; Li, CH; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1996Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactorChang, KM; Yeh, TH; Wang, SW; Li, CH; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
12-五月-1997Effect of adding Ar on the thermal stability of chemical vapor deposited fluorinated silicon oxide using an indirect fluorinating precursorChang, KM; Wang, SW; Li, CH; Yeh, TH; Yang, JY; 奈米中心; Nano Facility Center
1-六月-1996Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperatureChang, KM; Tsai, JY; Li, CH; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1996Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperatureChang, KM; Tsai, JY; Li, CH; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1997The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidationChang, KM; Li, CH; Fahn, FJ; Tsai, JY; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-八月-1996Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursorChang, KM; Wang, SW; Wu, CJ; Yeh, TH; Li, CH; Yang, JY; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
26-八月-1996Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursorChang, KM; Wang, SW; Wu, CJ; Yeh, TH; Li, CH; Yang, JY; 奈米中心; Nano Facility Center
1-五月-2003Low-pressure crystallization of sol-gel-derived PbZr0.52Ti0.48O3 thin films at low temperature for low-voltage operationWang, DY; Chien, CH; Chang, CY; Leu, CC; Yang, JY; Chuang, SH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-四月-2002Metalorganic chemical vapor deposition of tungsten carbonitride films by bis(tertbutylimido)bis(diethylamido)tungsten.Chuang, SH; Chiu, HT; Chou, YH; Chang, YH; Chen, SF; Yang, JY; 應用化學系; Department of Applied Chemistry
1-五月-1999New constraint stabilization technique for dynamic systems with nonholonomic constraintsWu, SD; Chiou, JC; Yang, JY; 電控工程研究所; Institute of Electrical and Control Engineering
1-五月-1998A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide filmChang, KM; Li, CH; Sheih, BS; Yang, JY; Wang, SW; Yeh, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2000A novel process and thermodynamic mechanisms of air gap formation for ULSI applicationChang, KM; Yang, JY; Chen, LW; Tseng, MH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1999A novel technology to form air gap for ULSI applicationChang, KM; Yang, JY; Chen, LW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999A pretreatment technique to improvement the ashing resistance of low k spin-on-polymer (SOP)Chang, KM; Yang, JY; Chang, YH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Reactive ion pretreatment technique to improve the ashing resistance of low dielectric constant high carbon content polymerChang, KM; Yang, JY; Chang, YH; Tsai, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1998The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunneling stressChang, KM; Li, CH; Wang, SW; Yeh, TH; Yang, JY; Lee, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1997Robust attitude control of spacecraft using sliding mode control and productive networksChiou, JC; Hwang, MC; Wu, SD; Yang, JY; 電控工程研究所; Institute of Electrical and Control Engineering
顯示 1 到 20 筆資料，總共 21 筆  下一頁 >