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公開日期標題作者
1-四月-1998Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET'sChen, MJ; Huang, HT; Hou, CS; Yang, KN; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2001Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETsYang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETsYang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2001Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETsYang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SSM; Yu, DCH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2000A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxidesYang, KN; Huang, HT; Chang, MC; Chu, CM; Chen, YS; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆