標題: | Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETs |
作者: | Yang, KN Huang, HT Chen, MJ Lin, YM Yu, MC Jang, SSM Yu, DCH Liang, MS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | direct tunneling (DT);edge direct tunneling (EDT);gate-induced drain leakage (GIDL);MOSFETs;oxide;surface quantization;valence-band electron tunneling (VBET) |
公開日期: | 1-Dec-2001 |
摘要: | This paper examines the edge direct tunneling (EDT) of holes from p(+) polysilicon to underlying p-type drain extensions in off-state p-channel MOSFETs having ultrathin gate oxides that are 1.2 nm-2.2 nm thick. It is for the first time found that for thinner oxides, hole EDT is more pronounced than both conventional gate-induced drain leakage (GIDL) and gate-to-channel tunneling. As a result, the induced gate and drain leakage is more accurately measured per unit gate width. Terminal currents versus input voltage are measured from a CMOS inverter with gate oxide thickness T-OX = 1.23 nm, exhibiting the impact of EDT in two standby modes. For the first time, a physical model is derived for the oxide field E-OX at the gate edge by accounting for the heavy and light holes' subbands in the quantized accumulation polysilicon surface. This model relates E-OX to the gate-to-drain voltage, oxide thickness, and doping concentration of the drain extension. Once E-OX is known, an existing direct tunneling (DT) model consistently reproduces EDT current-voltage (I-V), and the tunneling path size extracted falls adequately within the gate-to-drain overlap region. The ultimate oxide thickness limit due to hole EDT is projected. |
URI: | http://dx.doi.org/10.1109/16.974705 http://hdl.handle.net/11536/29206 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.974705 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 48 |
Issue: | 12 |
起始頁: | 2790 |
結束頁: | 2795 |
Appears in Collections: | Articles |
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