標題: | A new quasi-2-D model for hot-carrier band-to-band tunneling current |
作者: | You, KF Wu, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | band-to-band tunneling;gate-induced drain leakage current (GIDL);hot carrier;two-dimensional effect |
公開日期: | 1-六月-1999 |
摘要: | A significant mismatch occurs when we predict the gate-induced drain leakage current (GIDL) by using existing one-dimensional (1-D) models, It's found that the gate-induced drain leakage current is attributed to not only the vertical field but also the lateral field near the drain-to-gate overlap region, Therefore, anew quasi-two-dimensional (quasi-2-D) model considering both the lateral and vertical fields for predicting the gate-induced drain leakage current is proposed by using the drain-induced energy-barrier reduction in our model, The calculated results using the developed quasi-2-D model are in good agreement with measured values for a wide range of gate and drain biases, Therefore, the proposed new;model can be used to simulate the hot-carrier band-to-band tunneling current for p-channel flash memory device. |
URI: | http://dx.doi.org/10.1109/16.766880 http://hdl.handle.net/11536/31319 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.766880 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 46 |
Issue: | 6 |
起始頁: | 1174 |
結束頁: | 1179 |
顯示於類別: | 期刊論文 |