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公開日期標題作者
1-七月-2008GaN growth on Si(111) using simultaneous AlN/alpha-Si(3)N(4) buffer structureChang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-七月-2008GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structureChang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen; 材料科學與工程學系; 電子物理學系; 電子工程學系及電子研究所; 電子與資訊研究中心; Department of Materials Science and Engineering; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics; Microelectronics and Information Systems Research Center
15-三月-2009Growth of free-standing GaN layer on Si(111) substrateYang, Tsung Hsi; Ku, Jui Tai; Chang, Jet-Rung; Shen, Shih-Guo; Chen, Yi-Cheng; Wong, Yuen Yee; Chou, Wu Ching; Chen, Chien-Ying; Chang, Chun-Yen; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
3-二月-2005Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layerChang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen
12-十一月-2009Light emitting device and fabrication method thereforChang, Chun-Yen; Yang, Tsung Hsi
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