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顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
15-五月-2006Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxyHuang, GS; Yao, HH; Lu, TC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
19-一月-2004Characteristics of stable emission GaN-based resonant-cavity light-emitting diodesLin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
6-二月-2006Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor depositionHuang, GS; Lu, TC; Yao, HH; Kuo, HC; Wang, SC; Lin, CW; Chang, L; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
22-八月-2005Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflectorKao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF; 光電工程學系; Department of Photonics
1-三月-2005High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelengthKuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC; 光電工程學系; Department of Photonics
1-五月-2005Influence of dislocation density on photoluminescence intensity of GaNFalth, JF; Gurusinghe, MN; Liu, XY; Andersson, TG; Ivanov, IG; Monemar, B; Yao, HH; Wang, SC; 光電工程學系; Department of Photonics
28-三月-2006InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruptionYao, HH; Lu, TC; Huang, GS; Chen, CY; Liang, WD; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-三月-2006The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectorsKao, CC; Lu, TC; Huang, HW; Chu, JT; Peng, YC; Yao, HH; Tsai, JY; Kao, TT; Kuo, HC; Wang, SC; Lin, CF; 光電工程學系; Department of Photonics
2003MOCVD growth of AlN/GaN DBR structure under various ambient conditionsYao, HH; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
15-二月-2004MOCVD growth of AlN/GaN DBR structures under various ambient conditionsYao, HH; Lin, CF; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
10-十二月-2004MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emissionKuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
2005An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectorsKao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-四月-2006Room-temperature operation of optically pumped blue-violet GaN-based vertical-cavity surface-emitting lasers fabricated by laser lift-offChu, JT; Lu, TC; Yao, HH; Kao, CC; Liang, WD; Tsai, JY; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
顯示 1 到 13 筆資料，總共 13 筆