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顯示 1 到 8 筆資料，總共 8 筆
公開日期標題作者
2008Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete DopantsLi, Yiming; Hwang, Chih-Hong; Yeh, Ta-Ching; 電信工程研究所; Institute of Communications Engineering
2007Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperatureLi, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming; Yeh, Ta-Ching; Cheng, Hui-Wen; Chen, Hung-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang; 電信工程研究所; Institute of Communications Engineering
2008Comprehensive Examination of Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET DevicesHwang, Chih-Hong; Cheng, Hui-Wen; Yeh, Ta-Ching; Li, Tien-Yeh; Huang, Hsuan-Ming; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
2007Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI DevicesLi, Yiming; Hwang, Chih-Hong; Huang, Hsuan-Ming; Yeh, Ta-Ching; 電信工程研究所; Institute of Communications Engineering
2008Emission Efficiency Dependence on the Tilted Angle of Nanogaps in Surface Conduction Electron-EmitterLi, Yiming; Kuo, Yi-Ting; Cheng, Hui-Wen; Yeh, Ta-Ching; Lo, Hsiang-Yu; Chiang, Mei-Tsao; Mo, Chi-Neng; 電信工程研究所; Institute of Communications Engineering
2008Morphology effect on field emission property of carbon nanotube emitters in triode structureCheng, Hui-Wen; Yeh, Ta-Ching; Kuo, Yi-Ting; Li, Yiming; Lin, Chen-Chun; Pan, Fu-Ming; Chiang, Mei-Tsao; Lo, Kuo-Chung; Mo, Chi-Neng; 電信工程研究所; Institute of Communications Engineering
2008Reduction of Discrete-Dopant-Induced High-Frequency Characteristic Fluctuations in Nanoscale CMOS CircuitLi, Yiming; Hwang, Chih-Hong; Yeh, Ta-Ching; Huang, Hsuan-Ming; Li, Tien-Yeh; Cheng, Hui-Wen; 電信工程研究所; Institute of Communications Engineering
1-九月-2008Three-dimensional simulation of field emission triode structure using carbon-nanotube emittersLi, Yiming; Yeh, Ta-Ching; 電信工程研究所; Institute of Communications Engineering
顯示 1 到 8 筆資料，總共 8 筆