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Browsing by Author Yoo, WJ

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Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
20043D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOSYu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL; 交大名義發表; National Chiao Tung University
1-Jul-2005Formation of dual-phase HfO2-HfxSi1-xO2 dielectric and its application in memory devicesWang, YQ; Chen, JH; Yoo, WJ; Yeo, YC; Yeo, YC; Chin, A; Du, AY; 奈米科技中心; Center for Nanoscience and Technology
2005Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function differenceYu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2005Low noise RF MOSFETs on flexible plastic substratesKao, HL; Chin, A; Hung, BF; Lee, CF; Lai, JM; McAlister, SP; Sarnudra, GS; Yoo, WJ; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
1-Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retentionChin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC; 電機學院; College of Electrical and Computer Engineering
1-Mar-2005A novel program-erasable high-(K) A1N-Si MIS capacitorLai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retentionLai, CH; Chin, A; Chiang, KC; Yoo, WJ; Cheng, CF; McAlister, SP; Chi, CC; Wu, P; 電機學院; College of Electrical and Computer Engineering
1-May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2005Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devicesYu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
Showing results 1 to 10 of 10